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| Semiconductor DN500F NPN Silicon Transistor Description * Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) * Suitable for low voltage large current drivers * Complementary pair with DP500F * Switching Application Ordering Information Type NO. DN500F : Marking N5 monthly code Package Code SOT-89 Outline Dimensions 4.0 0.500.1 -0.3 +0.5 unit : mm 2.5 +0.2 -0.3 1.000.3 3 1.820.05 -0.1 +0.2 2 1 0.420.05 0.520.05 0.15 Typ. 1.5 -0.1 +0.2 4.5 0.42 +0.04 0~0.1 -0.02 PIN Connections 1. Base 2. Collector 3. Emitter KST-8012-002 1 DN500F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VC B O VC E O VE B O IC PC PC * Ratings 15 12 5 5 0.5 2 150 -55~150 Unit V V V A W C C Tj T stg * : When mounted on 40x40x0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) fT C ob Test Condition IC =50A, IE=0 IC =1mA, IB=0 IE=50A, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500mA VCE=2V, IC =3A IC =3A, IB=150mA IC =3A, IB=150mA VCB=5V, IC =500mA VCB=10V, IE=0, f=1MHz Min. 15 12 5 160 40 - Typ. 150 - Max. 0.1 0.1 320 0.3 1.2 50 Unit V V V A A V V MHz pF KST-8012-002 2 DN500F Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 Ic - VB E Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-8012-002 3 |
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